continental device india limited data sheet page 1 of 4 pnp silicon planar epitaxial transistor low frequency amplifier complementary to csc945 absolute maximum ratings rating rating rating rating rating symbol symbol symbol symbol symbol value value value value value unit unit unit unit unit collector-base voltage bv cbo 60 v collector-emitter voltage bv ceo 50 v emitter base voltage bv ebo 5v collector current (dc) i c 100 ma base current (dc) i b 20 ma total power dissipation @ t amb = 25 c p tot 500 mw operating storage junction t j ,t stg -55 to +150 c temperature range csa733 1 = emitter 2 = collector 3 = base 1 = emitter 2 = collector 3 = base dim min max a 4,32 5,33 b 4,45 5,20 c 3,18 4,19 d 0,41 0,55 e 0,35 0,50 f 5 deg g 1,14 1,40 h 1,14 1,53 k 12,70 ? l 1.982 2.082 all dimensions in m.m. 1 2 3 e c b to-92 plastic package continental device india limited an iso/ts16949 and iso 9001 certified company
continental device india limited data sheet page 2 of 4 electrical characteristics (ta=25 c unless otherwise specified)
collector emitter breakdown voltage i c =1ma, i b =0 bv ceo 50 - - v collector base voltage i c =100a, i e =0 bv cbo 60 - - v emitter base voltage i e =10a, i c =0 bv ebo 5--v collector cut-off current v cb =60v, i e =0 i cbo - - 0.1 a emitter cut-off current v eb =5v, i c =0 i ebo - - 0.1 a dc current gain v ce =6v, i c =1ma h fe* 90 - 600 collector emitter saturation voltage i c =100ma, i b =10ma v ce(sat) - - 0.3 v base emitter on voltage i c =1ma, v ce =6v v be(on) 0.6 - 0.7 v dynamic characteristics current-gain bandwidth product v ce =6v, i c =10ma f t 100 - - mhz common base output capacitance v cb =10v, i e =0, f=1mhz c ob --6pf noise figure v ce =6v, i c =0.3ma nf - - 20 db r s =10k ?,
continental device india limited data sheet page 3 of 4 csa733 base emitter on voltage collector current i c (ma) v ce = ?6v dc current gain h fe dc current gain v be (v), base-emitter voltage i c (ma), collector current current gain-bandwidth product f t (mhz), current gain-bandwidth product i c (ma), collector current base-emitter saturation voltage collector-emitter saturation voltage v be (sat), v ce (sat) (v), saturation voltage i c (ma), collector current v ce(sat) v ce =?6v v be(sat) 500 300 100 50 30 10 5 3 1 1000 ?0.1 v ce =?6v i c =10i b 0 ?0.2 ?0.4 ?0.6 ?0.8 ?1.0 ?1.2
continental device india limited data sheet page 4 of 4 customer notes disclaimer the product information and the selection guides facilitate selection of the cdil's discrete semiconductor device(s) best suite d for application in your product(s) as per your requirement. it is recommended that you completely review our data sheet(s) so a s to confirm that the device(s) meet functionality parameters for your application. the information furnished on the cdil web sit e/ cd are believed to be accurate and reliable. cdil however, does not assume responsibility for inaccuracies or incomplete information. furthermore, cdil does not assume liability whatsoever, arising out of the application or use of any cdil product; neither does it convey any license under its patent rights nor rights of others. these products are not designed for use in lif e saving/support appliances or systems. cdil customers selling these products (either as individual discrete semiconductor devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and cdil will not be responsible for any damages resulting from such sale(s). cdil strives for continuous improvement and reserves the right to change the specifications of its products without prior notic e. cdil is a registered trademark of continental device india limited c-120 naraina industrial area, new delhi 110 028, india. telephone + 91-11-2579 6150, 5141 1112 fax + 91-11-2579 5290, 5141 1119 email@cdil.com www.cdilsemi.com
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